| 发明名称 |
MEMS CAPACITIVE PRESSURE SENSORS |
| 摘要 |
A MEMS capacitive pressure sensor is provided. The MEMS capacitive pressure sensor includes a substrate having a first region and a second region, and a first dielectric layer formed on the substrate. The capacitive pressure sensor also includes a second dielectric layer having a step surface profile formed on the first dielectric layer, and a first electrode layer having a step surface profile formed on the second dielectric layer. Further, the MEMS capacitive pressure sensor includes an insulation layer formed on the first electrode layer, and a second electrode layer having a step surface profile with a portion formed on the insulation layer in the peripheral region and the rest suspended over the first electrode layer in the device region. Further, the MEMS capacitive pressure sensor also includes a chamber having a step surface profile formed between the first electrode layer and the second electrode layer. |
| 申请公布号 |
US2016152465(A1) |
申请公布日期 |
2016.06.02 |
| 申请号 |
US201514930926 |
申请日期 |
2015.11.03 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
HONG ZHONGSHAN |
| 分类号 |
B81B3/00;B81C1/00 |
主分类号 |
B81B3/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A MEMS capacitive pressure sensor, comprising:
a substrate having a first region and a second region surrounding the device region; a first dielectric layer formed on the substrate; a second dielectric layer having a step surface profile formed on the first dielectric layer; a first electrode layer having a step surface profile formed on the second dielectric layer and the first dielectric layer; an insulation layer formed on the first electrode layer; a second electrode layer having a step surface profile with a portion formed on the insulation layer in the peripheral region and the rest suspended over the first electrode layer in the device region; and a chamber having a step surface profile formed between the first electrode layer and the second electrode layer |
| 地址 |
Shanghai CN |
