| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacturing method of a semiconductor laser, capable of suppressing a reflection film formed on a resonance end surface from being peeled.SOLUTION: A manufacturing method of a semiconductor laser includes the steps of: forming a plurality of semiconductor lasers 2 separated with each other by a separation part 3, on a semiconductor substrate 1; forming a reflection film 8 on resonance end surfaces of the semiconductor lasers 2 and end surfaces of the separation parts 3 which exist on the same plane; removing the reflection film 8 on each separation part 3 while leaving the reflection film 8 on a light emitting point 6 of each of the semiconductor lasers 2; and, after removing the reflection film 8 on each separation part 3, separating the semiconductor lasers 2 individually with each separation part 3 as a boundary.SELECTED DRAWING: Figure 6 |
