MEMORY DEVICE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING MEMORY DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a first pillar-shaped semiconductor layer and a gate insulating film around the first pillar-shaped semiconductor layer. A gate electrode is around the gate insulating film and a gate line is connected to the gate electrode. A first diffusion layer resides in an upper portion of the first pillar-shaped semiconductor layer and a second diffusion layer resides in a lower portion of the first pillar-shaped semiconductor layer. A memory device on the first diffusion layer includes a pillar-shaped phase-change layer and a reset gate insulating film surrounding the pillar-shaped phase-change layer. A reset gate surrounds the reset gate insulating film, where the reset gate functions as a heater, and the pillar-shaped phase-change layer and the reset gate are electrically insulated from each other.

主权项

1. A semiconductor device comprising:
a first pillar-shaped semiconductor layer; a gate insulating film around the first pillar-shaped semiconductor layer; a gate electrode around the gate insulating film; a gate line connected to the gate electrode; a first diffusion layer in an upper portion of the first pillar-shaped semiconductor layer; a second diffusion layer in a lower portion of the first pillar-shaped semiconductor layer; and a memory device on the first diffusion layer, the memory device including:
a pillar-shaped phase-change layer;a reset gate insulating film surrounding the pillar-shaped phase-change layer; anda reset gate surrounding the reset gate insulating film,wherein the reset gate functions as a heater, andthe pillar-shaped phase-change layer and the reset gate are electrically insulated from each other.