METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

In a method for fabricating a semiconductor, a first conductive pattern structure partially protruding upwardly from first insulating interlayer is formed in first insulating interlayer. A first bonding insulation layer pattern covering the protruding portion of first conductive pattern structure is formed on first insulating interlayer. A first adhesive pattern containing a polymer is formed on first bonding insulation layer pattern to fill a first recess formed on first bonding insulation layer pattern. A second bonding insulation layer pattern covering the protruding portion of second conductive pattern structure is formed on second insulating interlayer. A second adhesive pattern containing a polymer is formed on second bonding insulation layer pattern to fill a second recess formed on second bonding insulation layer pattern. The first and second adhesive patterns are melted. The first and second substrates are bonded with each other so that the conductive pattern structures contact each other.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a first conductive pattern structure in a first insulating interlayer formed on a first substrate, a portion of the first conductive pattern structure protruding upwardly from the first insulating interlayer; forming a first bonding insulation layer pattern on the first insulating interlayer, the first bonding insulation layer pattern covering the portion of the first conductive pattern structure protruding from the first insulating interlayer; forming a first recess on the first bonding insulation layer pattern; forming a first adhesive pattern containing a polymer to fill the first recess; forming a second conductive pattern structure in a second insulating interlayer formed on a second substrate, a portion of the second conductive pattern structure protruding upwardly from the second insulating interlayer; forming a second bonding insulation layer pattern on the second insulating interlayer, the second bonding insulation layer pattern covering the portion of the second conductive pattern structure protruding from the second insulating interlayer; forming a second recess on the second bonding insulation layer pattern; forming a second adhesive pattern containing a polymer to fill the second recess; and melting adhesive in the first adhesive pattern and the second adhesive pattern; and bonding the first and second substrates with each other so that the first conductive pattern structure and the second conductive pattern structure are in contact with each other.