发明名称 |
TRANSISTOR STRAIN-INDUCING SCHEME |
摘要 |
A transistor device includes a gate structure disposed over a channel region of a semiconductor substrate. A source/drain recess is arranged in the semiconductor substrate alongside the gate structure. A doped silicon-germanium (SiGe) region is disposed within the source/drain recess and has a doping type which is opposite to that of the channel. An un-doped SiGe region is also disposed within the source/drain recess. The un-doped SiGe region underlies the doped SiGe region and comprises different germanium concentrations at different locations within the source/drain recess. |
申请公布号 |
US2016155819(A1) |
申请公布日期 |
2016.06.02 |
申请号 |
US201615017698 |
申请日期 |
2016.02.08 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Kwok Tsz-Mei;Sung Hsueh-Chang;Li Kun-Mu;Li Chii-Horng;Lee Tze-Liang |
分类号 |
H01L29/66;H01L29/165;H01L21/02;H01L29/08;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a transistor device, comprising:
forming a substantially v-shaped source/drain recess within a semiconductor substrate; forming outer un-doped strain-inducing regions in outermost lateral tips of the substantially v-shaped source/drain recess, the outer un-doped strain-inducing regions having a first strain-inducing component at a first concentration; and forming an intermediate un-doped strain-inducing region which extends along a lower angled sidewall of the substantially v-shaped source/drain recess and which extends between the outer un-doped strain-inducing regions without completely filling the substantially v-shaped source/drain recess, the intermediate un-doped strain-inducing region having a second strain-inducing component at a second concentration that differs from the first concentration. |
地址 |
Hsin-Chu TW |