SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE

摘要

A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.

主权项

1. A semiconductor component with a semiconductor body comprising silicon, the semiconductor body comprising:
a first zone of a first conduction type, and a second zone of a second conduction type complementary to the first conduction type, wherein the first zone and the second zone are connected to an electrically conductive layer; a connection zone of the second conduction type arranged between the second zone and the electrically conductive layer and adjoining the second zone, wherein the connection zone is more heavily doped than regions of the second zone that adjoin the connection zone; wherein the first conduction type is one of an n type and a p type, wherein, if the first conduction type is n type, the connection zone comprises acceptors exhibiting an energy level which lies 100 meV to 500 meV above the valence band of the semiconductor body at a temperature of the semiconductor body of 300 K, wherein, if the first conduction type is p type, the connection zone comprises donors exhibiting an energy level which lies 100 meV to 500 meV below the conduction band of the semiconductor body at a temperature of the semiconductor body of 300 K; wherein the connection zone is annealed in a region that contains at least a part of a doping of the connection zone and that is near the surface of the semiconductor body by temporarily melting the region by using a laser pulse; wherein the connection zone extends as far as the surface of the semiconductor body and makes contact with the electrically highly conductive layer; wherein the connection zone does not extend substantially deeper into the semiconductor body than the first zone.