| 摘要 |
PROBLEM TO BE SOLVED: To provide an imaging device that reduces leakage light to a charge holding part by improving a numerical aperture of a PD while provided with the charge holding part for each pixel.SOLUTION: An imaging device has a plurality of pixels, comprising a photoelectric conversion part formed in a depth direction on a reverse surface side of a semiconductor layer, and a charge holding part and a floating diffusion region connected by a first transfer gate on a top surface side of the semiconductor layer, arranged in two dimensions, and comprises a second transfer gate connecting the photoelectric conversion part and the charge holding part to each other, the second transfer gate being a vertical gate electrode formed deeply enough to reach the photoelectric conversion part from the top surface side of the semiconductor layer.SELECTED DRAWING: Figure 3 |
