发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method which are capable of efficiently removing an oxide film and hydrophobic groups and thus capable of suppressing deterioration in electrical characteristics of a substrate.SOLUTION: The substrate processing apparatus according to one embodiment includes a holding part and a removing part. The holding part holds a substrate on a surface of which an oxide film and hydrophobic groups are formed. The removing part supplies a processing gas to the surface of the substrate held by the holding part and removes the oxide film and the hydrophobic groups from the surface of the substrate by chemical etching using the processing gas.SELECTED DRAWING: Figure 1C |
申请公布号 |
JP2016103597(A) |
申请公布日期 |
2016.06.02 |
申请号 |
JP20140241962 |
申请日期 |
2014.11.28 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
NAKAMORI MITSUNORI;OISHI KOTARO;EGASHIRA KEISUKE;KITANO JUNICHI |
分类号 |
H01L21/304;H01L21/302 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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