发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method which are capable of efficiently removing an oxide film and hydrophobic groups and thus capable of suppressing deterioration in electrical characteristics of a substrate.SOLUTION: The substrate processing apparatus according to one embodiment includes a holding part and a removing part. The holding part holds a substrate on a surface of which an oxide film and hydrophobic groups are formed. The removing part supplies a processing gas to the surface of the substrate held by the holding part and removes the oxide film and the hydrophobic groups from the surface of the substrate by chemical etching using the processing gas.SELECTED DRAWING: Figure 1C
申请公布号 JP2016103597(A) 申请公布日期 2016.06.02
申请号 JP20140241962 申请日期 2014.11.28
申请人 TOKYO ELECTRON LTD 发明人 NAKAMORI MITSUNORI;OISHI KOTARO;EGASHIRA KEISUKE;KITANO JUNICHI
分类号 H01L21/304;H01L21/302 主分类号 H01L21/304
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