NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.

主权项

1. A core-shell structure semiconductor light emitting device, comprising:
a base layer formed of a first conductivity-type semiconductor material; an insulating layer disposed on the base layer and having a plurality of openings; a plurality of light emitting core-shell structures each disposed in an opening of the plurality of openings, each light emitting core-shell structure including a core formed of the first conductivity-type semiconductor material, and a shell including an active layer and a second conductivity-type semiconductor layer sequentially disposed on surfaces of the core; and a contact electrode spaced apart from the insulating layer and disposed on a portion of the second conductivity-type semiconductor layer, wherein a tip portion of each respective light emitting core-shell structure has crystal planes different from those on side surfaces of the respective light emitting core-shell structure.