发明名称 |
SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film. |
申请公布号 |
US2016155866(A1) |
申请公布日期 |
2016.06.02 |
申请号 |
US201514953264 |
申请日期 |
2015.11.27 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
HA Jungmin;KIM Sungjin;CHEONG Juhwa;AHN Junyong;CHOI Hyungwook;CHANG Wonjae;KIM Jaesung |
分类号 |
H01L31/0224;H01L31/0368;H01L31/077;H01L31/02;H01L31/18;H01L31/0216 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
1. A solar cell, comprising:
a semiconductor substrate; a tunnel layer on a first surface of the semiconductor substrate; a first conductive type semiconductor region on the tunnel layer and containing impurities of a first conductive type; a second conductive type semiconductor region on a second surface opposite to the first surface of the semiconductor substrate and containing impurities of a second conductive type opposite to the first conductive type; a first passivation film on the first conductive type semiconductor region; a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening formed in the first passivation film; a second passivation film on the second conductive type semiconductor region; and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening formed in the second passivation film. |
地址 |
Seoul KR |