发明名称 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
摘要 Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.
申请公布号 US2016155866(A1) 申请公布日期 2016.06.02
申请号 US201514953264 申请日期 2015.11.27
申请人 LG ELECTRONICS INC. 发明人 HA Jungmin;KIM Sungjin;CHEONG Juhwa;AHN Junyong;CHOI Hyungwook;CHANG Wonjae;KIM Jaesung
分类号 H01L31/0224;H01L31/0368;H01L31/077;H01L31/02;H01L31/18;H01L31/0216 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A solar cell, comprising: a semiconductor substrate; a tunnel layer on a first surface of the semiconductor substrate; a first conductive type semiconductor region on the tunnel layer and containing impurities of a first conductive type; a second conductive type semiconductor region on a second surface opposite to the first surface of the semiconductor substrate and containing impurities of a second conductive type opposite to the first conductive type; a first passivation film on the first conductive type semiconductor region; a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening formed in the first passivation film; a second passivation film on the second conductive type semiconductor region; and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening formed in the second passivation film.
地址 Seoul KR