METHOD OF FORMING STRAINED STRUCTURES OF SEMICONDUCTOR DEVICES

摘要

A method of fabricating a semiconductor device comprises providing a substrate with a shallow trench isolation (STI) within the substrate and a gate stack. A cavity is formed between the gate stack and the STI. The cavity comprises one sidewall formed by the STI, one sidewall formed by the substrate, and a bottom surface formed by the substrate. A film is grown in the cavity and thereafter an opening formed by removing a first portion of the strained film until exposing the bottom surface of the substrate while a second portion of the strained film adjoins the STI sidewall. Another epitaxial layer is then grown in the opening.

主权项

1. A method of fabricating a semiconductor device, comprising:
providing a substrate comprising a major surface; forming a shallow trench isolation (STI) within the substrate; forming a gate stack on the major surface of the substrate, wherein the STI is disposed on one side of the gate stack; forming a cavity distributed between the gate stack and the STI, wherein the cavity comprises one sidewall formed by the STI, one sidewall formed by the substrate, and a bottom surface formed by the substrate; epitaxially growing a strained film in the cavity; forming an opening by removing a first portion of the strained film until exposing the bottom surface of the substrate, wherein a second portion of the strained film adjoins the STI sidewall; and epitaxially growing a SiGe layer in the opening.