HIGH VOLTAGE DEVICE WITH LOW RDSON

摘要

High voltage devices and methods for forming thereof are disclosed. A high voltage device includes a substrate having a device region, where the device region includes a source region and a drain region defined thereon. A transistor is disposed on the device region. The transistor includes a gate disposed over the substrate and in between the source and drain regions. First and second device wells are disposed in the substrate within the device region. The first device well is adjacent to a second side of the gate and the second device well is adjacent to a first side of the gate. Isolation regions are disposed within the substrate. The isolation regions include a device isolation region surrounding the device region and one or more isolation fingers disposed in a first portion of the device region adjacent to the first side of the gate.

主权项

1. A high voltage device comprising:
a substrate having a device region, wherein the device region comprises a source region and a drain region defined thereon; a transistor disposed on the device region, wherein the transistor comprises a gate disposed over the substrate and in between the source and drain regions; first and second device wells disposed in the substrate within the device region, wherein the first device well is adjacent to a second side of the gate and the second device well is adjacent to a first side of the gate; and isolation regions disposed within the substrate, wherein the isolation regions comprise a device isolation region surrounding the device region and one or more isolation fingers disposed in a first portion of the device region adjacent to the first side of the gate.