Grids in Backside Illumination Image Sensor Chips and Methods for Forming the Same

摘要

A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

主权项

1. A method comprising:
forming a grid comprising a plurality of grid lines, with grid openings located between the plurality of grid lines; depositing an adhesion layer on sidewalls and top surfaces of the plurality of grid lines; forming a metal oxide layer over the adhesion layer; depositing a dielectric layer over the metal oxide layer; and removing portions of the adhesion layer, the metal oxide layer, and the dielectric layer from the grid openings.