SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

摘要

To provide a semiconductor device including a transistor which includes an oxide semiconductor film and has excellent electrical characteristics. A semiconductor device includes a transistor including a first electrode, a first insulating film over the first electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a second electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film. The difference between energy at a conduction band minimum of the first oxide semiconductor film and energy at a conduction band minimum of the second oxide semiconductor film is greater than or equal to 0.2 eV. A rate of change in drain current per unit channel width relative to a drain voltage of 1 V can be less than or equal to 2%.

主权项

1. A semiconductor device comprising:
a transistor, wherein the transistor includes a first electrode, a first insulating film over the first electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a second electrode over the second insulating film, wherein the oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film, wherein a difference between energy at a conduction band minimum of the first oxide semiconductor film and energy at a conduction band minimum of the second oxide semiconductor film is greater than or equal to 0.2 eV, and wherein, for the transistor, in a given range of drain voltage, a rate of change in drain current per unit channel width relative to a drain voltage of 1 V is less than or equal to 2%.