OXIDE SINTERED COMPACT, SPUTTERING TARGET, AND OXIDE SEMICONDUCTOR THIN FILM OBTAINED USING SAME

摘要

Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains oxides of indium, gallium, and aluminum. The gallium content is from 0.15 to 0.49 by Ga/(In + Ga) atomic ratio, and the aluminum content is from 0.0001 to less than 0.25 by Al/(In + Ga + Al) atomic ratio. A crystalline oxide semiconductor thin film formed using this oxide sintered compact as a sputtering target is obtained at a carrier density of 4.0 x 1018 cm-3 or less and a carrier mobility of 10 cm2V-1sec-1 or greater.