发明名称 MEMORY SYSTEM, STORAGE DEVICE, AND MEMORY SYSTEM CONTROL METHOD
摘要 The present invention suppresses memory cell degradation in nonvolatile memory. A read processing unit carries out read processing in which reading data is read from a plurality of memory cells on the basis of a first threshold. An error detection unit detects the presence of errors in the reading data and specifies memory cells having errors from among the plurality of memory cells. A rereading processing unit carries out rereading processing in which data from the specified memory cells is read as rereading data on the basis of a second threshold different from the first threshold. A refresh processing unit carries out refresh processing in which rereading data for memory cells from among the specified memory cells for which a rereading data value is different from the reading data is rewritten.
申请公布号 WO2016084497(A1) 申请公布日期 2016.06.02
申请号 WO2015JP78610 申请日期 2015.10.08
申请人 SONY CORPORATION 发明人 TERADA, HARUHIKO;SAKAI, LUI;OKUBO, HIDEAKI;TSUTSUI, KEIICHI
分类号 G11C13/00;G06F12/16 主分类号 G11C13/00
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