发明名称 OPERATIING METHOD OF NONVOLATILE MEMORY SYSTEM
摘要 The present invention relates to a method for operating a nonvolatile memory system, to enhance the reliability of detecting an optimal read voltage. According to one embodiment of the present invention, the method comprises the following steps: detecting the number of on-cells of memory cells on the basis of a start sampling voltage; comparing the detected number of on-cells with a reference value; setting sampling voltages on the basis of the comparison result; performing a sampling operation on the memory cells on the basis of the sampling voltages; and detecting an optimal read voltage to discriminate any one of program states on the basis of the result of the sampling operation.
申请公布号 KR20160062298(A) 申请公布日期 2016.06.02
申请号 KR20140164546 申请日期 2014.11.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, KWANG HOON;YOO, YOUNG GEON;KONG, JUN JIN
分类号 G11C16/34;G11C16/26 主分类号 G11C16/34
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