发明名称 |
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE |
摘要 |
Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container. |
申请公布号 |
US2016155808(A1) |
申请公布日期 |
2016.06.02 |
申请号 |
US201615017235 |
申请日期 |
2016.02.05 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HONKE Tsubasa;OKITA Kyoko;KAWASE Tomohiro;HORI Tsutomu |
分类号 |
H01L29/16;H01L29/04;C30B29/36;C30B23/02;C30B23/06 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Osaka JP |