SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SAME

摘要

A silicon carbide semiconductor device 100, provided with an n-type semiconductor area 114 formed on the surface of an n-type epitaxial layer 112, a p type body area 116 formed in a deeper position than the n-type semiconductor area, a p-type channel area 118 formed from the surface side of an epitaxial layer up to the p-type body area, and an n++type source area 120 formed from the surface side of the n-type epitaxial layer toward the p-type body area, the p-type channel area and the n++type source area being formed in planar positions such that an n-type semiconductor area remains between the p-type channel area and the n++type source area, and the border surface on the outer peripheral side of the border surface between the p-type channel area and the n-type semiconductor area is positioned further inward than an outer peripheral surface 116a of the p-type body area. The channel area can be formed by a single masking step, and a channel length sufficient to not precipitate a short channel effect can be drawn with precision by a practical process.