A SOURCE/DRAIN STRUCTURE AND MANUFACTURING THE SAME

摘要

A fin-like field effect transistor (FinFET) device is disclosed. The device includes: a semiconductor substrate having a source/drain region; a plurality of isolation regions over the semiconductor substrate; and a source/drain feature in the source/drain region. The source/drain feature includes a plurality of plug-type portions over the substrate, each of which is isolated by a respective isolation region. The source/drain feature also includes a single upper portion over the isolation regions. The single upper portion is merged from the plug-type portions. The single upper portion has a flat upper surface facing toward the opposite side of an upper surface of the isolation region.