INTERCONNECT STRUCTURE FOR AN INTEGRATED CIRCUIT AND METHOD OF FABRICATING AN INTERCONNECT STRUCTURE

摘要

An integrated circuit includes first and second metallization levels. The first metallization level includes a first metal routing path. The second metallization level includes a dielectric layer having a via opening formed therein extending vertically through the dielectric layer to reach a top surface of the first metal routing path. A metal plug is deposited at a bottom of the via opening in direct contact with the first metal routing path. A remaining open area of the via opening is filled with a metal material to define a second metal routing path. The metal plug is formed of cobalt or an alloy including cobalt, and has an aspect ratio of greater than 0.3.

主权项

1. An integrated circuit, comprising:
a first metallization level including a first metal routing path; and a second metallization level overlying the first metallization level, said second metallization level including:
a dielectric layer;a via opening formed in said dielectric layer extending vertically through the dielectric layer to a top surface of the first metal routing path;a metal plug at a bottom of the via opening in direct contact with the first metal routing path which leaves a remaining opening in the via opening; anda metal material which fills the remaining opening to define a second metal routing path; wherein the metal plug is formed of cobalt or an alloy including cobalt; and wherein the metal plug has an aspect ratio of greater than 0.3.