| 发明名称 |
SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SAME, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE |
| 摘要 |
A silicon carbide substrate which is formed of silicon carbide and has a main surface wherein the total length of linear etch pits observed therein is not longer than the diameter of the silicon carbide substrate if the main surface is etched by a chlorine gas. |
| 申请公布号 |
WO2016084561(A1) |
申请公布日期 |
2016.06.02 |
| 申请号 |
WO2015JP81027 |
申请日期 |
2015.11.04 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HONKE, TSUBASA;OKITA, KYOKO |
| 分类号 |
C30B29/36;B24B37/00;C09K3/14;C30B33/12;H01L21/205;H01L21/304 |
主分类号 |
C30B29/36 |
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代理人 |
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