SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To improve reliability and performance of a semiconductor device having a nonvolatile memory.SOLUTION: A semiconductor device comprises: a selection gate electrode SG formed on a semiconductor substrate SB via an insulation film GF; an insulation film SP as a side wall insulation film formed on both lateral faces of the selection gate electrode SG; and a memory gate electrode MG formed on the semiconductor substrate SB via an insulation film MZ having a charge storage part. The selection gate electrode SG and the memory gate electrode MG are adjacent to each other via the insulation film SP and the insulation film MZ. The insulation film SP is not formed under the memory gate electrode MG. A total thickness T2 of the insulation film SP and the insulation film MZ which are sandwiched between the selection gate electrode SG and the memory gate electrode MG is larger than a thickness T1 of the insulation film MZ sandwiched between the semiconductor substrate SB and the memory gate electrode MG.SELECTED DRAWING: Figure 3