Method of Making a FinFET Device

摘要

A method of fabricating a fin-like field-effect transistor (FinFET) device is disclosed. The method includes forming first and second gate stacks over first and second portions of a fin feature respectively; filling a space between the first and second gate stacks with a dielectric layer; removing the first and second gate stacks to form first and second trenches respectively; and removing the first portion of the fin feature through the first trench while keeping the second portion of the fin feature in the second trench. The method further includes, after the removing of the first portion, depositing a gate dielectric layer and a gate electrode layer in the first and second trenches.

主权项

1. A method for fabricating a fin-like field-effect transistor (FinFET) device, the method comprising:
forming first and second gate stacks over first and second portions of a fin feature over a substrate respectively; filling a space between the first and second gate stacks with a dielectric layer; removing the first and second gate stacks to form first and second trenches respectively; removing the first portion of the fin feature through the first trench while keeping the second portion of the fin feature in the second trench; and after the removing of the first portion, depositing a gate dielectric layer and a gate electrode layer in the first and second trenches.