发明名称 |
PHOTORESIST REMOVAL |
摘要 |
Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist. |
申请公布号 |
US2016152926(A1) |
申请公布日期 |
2016.06.02 |
申请号 |
US201615018113 |
申请日期 |
2016.02.08 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
Minsek David W.;Rath Melissa K.;Bernhard David D.;Baum Thomas H. |
分类号 |
C11D3/30;H01L21/02;C11D1/72;C11D11/00;C11D7/32;C11D7/34 |
主分类号 |
C11D3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Danbury CT US |