| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching device which can reduce an exhaust amount of greenhouse gas without worsening etching work characteristics in a plasma etching process arranged so as to perform an etching step and a protection film formation step alternately and repeatedly.SOLUTION: A plasma etching device 10 is adopted, which comprises: a chamber 11 which contains a susceptor 12 to put a silicon on; an etching gas-supply source 14 serving to supply, as an etching gas, gas including SFthrough an etching gas supply line 17 into the chamber 11; a plasma generating unit 13 disposed around the chamber 11; and a deposit gas-supply source 15 for supplying 2,3,3,3-tetrafluoropropene through a deposit gas-supply line 18 into the chamber 11.SELECTED DRAWING: Figure 1 |
