发明名称 AMPLIFIER HAVING ENHANCED POWER EFFICIENCY
摘要 An RF amplifier with enhance power efficiency is disclosed. The RF amplifier traces the envelope of the input RF signal and varies the supply voltage to the final FET depending on the detected envelope through a linear power supply and a switching power supply superposed on the linear power supply. The linear power supply promptly responds the change of the envelope and gradually decreases the supply current as maintaining the supply voltage. The switching power supply takes over the supplement of the supply current to the final FET.
申请公布号 US2016156317(A1) 申请公布日期 2016.06.02
申请号 US201414558196 申请日期 2014.12.02
申请人 Sumitomo Electric Device Innovations, Inc. 发明人 INOUE Shingo
分类号 H03F1/02;H03F3/21;H03F3/19 主分类号 H03F1/02
代理机构 代理人
主权项 1. An amplifier for amplifying radio frequency (RF) signals, comprising: a field effect transistor (FET) to be supplied with a supply voltage and a supply current; a linear power supply to provide the supply voltage and a portion of the supply current to the FET as responding an envelope of the RF signals by receiving a source power supply; and a switching power supply superposed on the linear power supply, the switching power supply providing a rest portion of the supply current to the FET from the source power supply by receiving the source power supply.
地址 Yokohama-shi JP