Arrays Of Recessed Access Gate Lines, Arrays Of Conductive Lines, Arrays Of Recessed Access Gate Lines And Conductive Lines, And Memory Circuitry

摘要

An array of recessed access gate lines includes active area regions having dielectric trench isolation material there-between. The trench isolation material comprises dielectric projections extending into opposing ends of individual active area regions under an elevationally outermost surface of material of the active area regions. The active area material is elevationally over the dielectric projections. Recessed access gate lines individually extend transversally across the active area regions and extend between the ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material. Other arrays are disclosed, as are methods.

主权项

1. An array of recessed access gate lines, comprising:
active area regions having dielectric trench isolation material there-between, the trench isolation material comprising dielectric projections extending into opposing ends of individual active area regions under an elevationally outermost surface of material of the active area regions, the active area material being elevationally over the dielectric projections; and recessed access gate lines individually extending transversally across the active area regions and extending between the ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material.