PROGRAM OPERATIONS WITH EMBEDDED LEAK CHECKS

摘要

Methods of operating a memory device having embedded leak checks may mitigate data loss events due to access line defects, and may facilitate improved power consumption characteristics. Such methods might include applying a program pulse to a selected access line coupled to a memory cell selected for programming, verifying whether the selected memory cell has reached a desired data state, bringing the selected access line to a first voltage, applying a second voltage to an unselected access line, applying a reference current to the selected access line, and determining if a current flow between the selected access line and the unselected access line is greater than the reference current.

主权项

1. A method of operating a memory device, comprising:
applying a program pulse to a selected access line coupled to a memory cell selected for programming during a program operation; applying a verify pulse to the selected access line to activate the selected memory cell if it has reached a desired data state while applying a pass voltage pulse to an unselected access line adjacent the selected access line to activate a memory cell coupled to the unselected access line regardless of its data state; after applying the pass voltage pulse to the unselected access line, applying a particular voltage to the unselected access line; while applying the particular voltage to the unselected access line, sensing a current of the selected access line; and indicating a fail status of the program operation if an absolute value of the sensed current of the selected access line is greater than a particular current.