MANUFACTURING METHOD OF IMAGING APPARATUS, IMAGING APPARATUS, AND IMAGING SYSTEM

摘要

A manufacturing method of an imaging apparatus includes a process of forming, on a same substrate, gate electrodes of multiple MOS transistors forming pixel circuits and gate electrodes of multiple MOS transistors forming peripheral circuits, and a process of forming, on the substrate, an insulating film covering the gate electrodes of the multiple MOS transistors found in the pixel circuits and the gate electrodes of the multiple MOS transistors found in the peripheral circuits. A thickness of the gate electrode of a first MOS transistor in the multiple MOS transistors found in the pixel circuits is 1.2 times or more a thickness of the gate electrode of a second MOS transistor in the multiple MOS transistors found in the peripheral circuits.

主权项

1. A manufacturing method of an imaging apparatus that includes, on a same substrate, pixel circuits comprising a plurality of MOS transistors and peripheral circuits comprising a plurality of MOS transistors, the manufacturing method comprising:
a process of forming, on the substrate,
gate electrodes of the plurality of MOS transistors found in the pixel circuits, andgate electrodes of the plurality of MOS transistors found in the peripheral circuits; and a process of forming, on the substrate, an insulating film covering the gate electrodes of the plurality of MOS transistors found in the pixel circuits and the gate electrodes of the plurality of MOS transistors found in the peripheral circuits, wherein a thickness of the gate electrode of a first MOS transistor in the plurality of MOS transistors found in the pixel circuits is not less than 1.2 times a thickness of the gate electrode of a second MOS transistor in the plurality of MOS transistors found in the peripheral circuits.