| 发明名称 |
MAGNETIC CELL STRUCTURES, AND METHODS OF FABRICATION |
| 摘要 |
A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed. |
| 申请公布号 |
US2016155932(A1) |
申请公布日期 |
2016.06.02 |
| 申请号 |
US201414558367 |
申请日期 |
2014.12.02 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Chen Wei;Harms Jonathan D.;Murthy Sunil |
| 分类号 |
H01L43/08;H01L27/22;H01L43/12;H01L43/02 |
主分类号 |
H01L43/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
at least one magnetic cell structure overlying an electrode over a substrate, the at least one magnetic cell structure comprising:
a seed material comprising tantalum, platinum, and ruthenium overlying an electrode on a substrate;a magnetic region overlying the seed material;an insulating material overlying the magnetic region;another magnetic region overlying the insulating material; and another electrode overlying the another magnetic region. |
| 地址 |
Boise ID US |
