GERMANIUM METAL-CONTACT-FREE NEAR-IR PHOTODETECTOR

摘要

A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.

主权项

1. A germanium photodetector, comprising:
a first doped semiconductor contact; a second doped semiconductor contact; and an intrinsic germanium body in electrical contact with said first doped semiconductor contact and in electrical contact with said second doped semiconductor contact, said first doped semiconductor contact and said second doped semiconductor contact disposed on a same side of said intrinsic germanium body, said intrinsic germanium body lacking direct mechanical contact with a metal contact; said first doped semiconductor contact and said second doped semiconductor contact in electrical communication with respective metal terminals configured to provide electrical signals generated in the germanium photodetector by absorption of electromagnetic radiation to circuitry external to the germanium photodetector.