发明名称 Method of Manufacturing a Device by Locally Heating One or More Metalization Layers and by Means of Selective Etching
摘要 A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.
申请公布号 US2016155861(A1) 申请公布日期 2016.06.02
申请号 US201615017252 申请日期 2016.02.05
申请人 Infineon Technologies AG 发明人 Rupp Roland;Woehlert Stefan;Gutt Thomas;Treu Michael
分类号 H01L29/808;H01L29/417;H01L29/423;H01L23/528;H01L29/872 主分类号 H01L29/808
代理机构 代理人
主权项 1. A device comprising: a substrate; a metallization being locally arranged on a selected area, the metallization comprising an alloy of at least two initial metals, or a compound of one or more initial metals with the substrate, the initial metals or the substrate being such that they exhibit an etching selectivity toward an etching medium which is different than that of the alloy or the compound.
地址 Neubiberg DE