| 发明名称 |
NANOGAPS ON ATOMICALLY THIN MATERIALS AS NON-VOLATILE READ/WRITABLE MEMORY DEVICES |
| 摘要 |
The present invention relates to the presence of nanogaps across a metal dispersed over an atomically-thin material, such that the nanogap exposes the atomically-thin material. The resulting device offers an ultra-short gap with ballistic transport and demonstrated switching in the presence of a gate or dielectric material in close proximity to the channel. |
| 申请公布号 |
US2016155839(A1) |
申请公布日期 |
2016.06.02 |
| 申请号 |
US201514952433 |
申请日期 |
2015.11.25 |
| 申请人 |
Strachan Douglas Robert;Sundararajan Abhishek;Boland Mathias Joseph |
发明人 |
Strachan Douglas Robert;Sundararajan Abhishek;Boland Mathias Joseph |
| 分类号 |
H01L29/788;H01L29/78;H01L29/16;H01L29/66;H01L29/423;H01L29/24 |
主分类号 |
H01L29/788 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory element, comprising an atomically-thin layer on top of a gate layer and a metallic layer dispersed on top of the atomically-thin layer, wherein a nanogap channel of a width of about 0.1 nm to 100 nm passes entirely across the metallic layer and exposes the atomically thin layer, such that the metallic layer is divided by the nanogap channel into a source electrode and a drain electrode. |
| 地址 |
Lexington KY US |
