发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region. |
申请公布号 |
US2016155838(A1) |
申请公布日期 |
2016.06.02 |
申请号 |
US201615006522 |
申请日期 |
2016.01.26 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Jung-Hwan;Leam Hun-Hyeoung;Kim Tae-Hyun;Nam Seok-Woo;Namkoong Hyun;Kim Yong-Seok;Yu Tea-Kwang |
分类号 |
H01L29/78;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |