发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
申请公布号 US2016155838(A1) 申请公布日期 2016.06.02
申请号 US201615006522 申请日期 2016.01.26
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Jung-Hwan;Leam Hun-Hyeoung;Kim Tae-Hyun;Nam Seok-Woo;Namkoong Hyun;Kim Yong-Seok;Yu Tea-Kwang
分类号 H01L29/78;H01L29/06 主分类号 H01L29/78
代理机构 代理人
主权项
地址 Suwon-si KR