| 摘要 |
The present invention relates to a surface-emitting laser diode comprising: a first reflection layer (200), an active layer (250), a current control layer, a second reflection layer (300), and an opening (400) on a substrate (100). The current control layer may be composed of a current block layer (260) in which a current is blocked, and a current pass layer (270) through which the current passes. The first reflection layer (200), the active layer (250), the current control layer, the second reflection layer (300), and the opening (400) are formed into a cylindrical mesa-shaped form with the periphery which is etched. A passivation layer (500) may be formed in the periphery of the cylindrical mesa-shaped form. A portion of the second reflection layer is open to be electrically connected to a first electrode layer (700). At a part etched with a trench form to open a portion of the top surface of the substrate is electrically connected to a second electrode layer (800). A portion of the first electrode layer (700) is formed to be electrically connected to a solder bump (850). A metal array layer formed at the opening causes a surface Plasmon phenomenon, thereby increasing light extraction efficiency and reducing a threshold current. |
