METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

The present invention relates to a manufacturing method of a semiconductor device, which can reduce the generation of particles. The manufacturing method of a semiconductor device includes the following steps: washing the inside of a chamber with a washing gas containing fluorine; forming a complex seasoning layer having a structure, where a silicon nitride film and a silicon oxide film are stacked, inside the chamber; and forming a target film on a substrate arranged inside the chamber.