| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor substrate which can sufficiently and simply ensure storage capacitance per one pixel.SOLUTION: A TFT substrate 110 having a capacitative element composed of a pair of electrodes and a thin film transistor comprises: a first electrode 21 located on a substrate 10; a first insulation film 31 located on the first electrode 21; a second electrode 22 located on the first insulation film 31; a second insulation film 32 located on the second electrode 22; and a semiconductor layer 40 located on the second insulation film 32. The capacitative element uses the first electrode 21 as one of the pair of electrodes and the second electrode 22 as the other of the pair of electrodes. The thin film transistor uses the second electrode 22 as a gate electrode, and the second insulation film 32 as a gate insulation film, and the semiconductor layer 40 as a channel layer.SELECTED DRAWING: Figure 3 |
