发明名称 PIEZOELECTRIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME
摘要 A piezoelectric resonator that includes a single crystal Si layer, a piezoelectric thin film formed from aluminum nitride and provided on the single crystal Si layer, and first and second electrodes provided so as to sandwich the piezoelectric thin film. An element excluding nitrogen and aluminum is doped into the piezoelectric thin film formed from aluminum nitride, and a synthetic acoustic velocity of portions of the piezoelectric resonator other than the single crystal Si layer substantially coincide with the acoustic velocity of the single crystal Si layer.
申请公布号 US2016156332(A1) 申请公布日期 2016.06.02
申请号 US201615002525 申请日期 2016.01.21
申请人 Murata Manufacturing Co., Ltd. 发明人 Umeda Keiichi
分类号 H03H9/17;H03H3/02;H03H9/13 主分类号 H03H9/17
代理机构 代理人
主权项 1. A piezoelectric resonator comprising: a single crystal Si layer; an aluminum nitride piezoelectric film adjacent the single crystal Si layer, the aluminum nitride piezoelectric film being doped with an element excluding nitrogen and aluminum; and a first and a second electrode sandwiching the aluminum nitride piezoelectric film, wherein a synthetic acoustic velocity of portions of the piezoelectric resonator other than the single crystal Si layer coincide with an acoustic velocity of the single crystal Si layer.
地址 Nagaokakyo-shi JP