发明名称 |
LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack is patterned and comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface. |
申请公布号 |
US2016155894(A1) |
申请公布日期 |
2016.06.02 |
申请号 |
US201314901415 |
申请日期 |
2013.06.26 |
申请人 |
EPISTAR CORPORATION |
发明人 |
HUANG Chien-Fu;LU Chih-Chiang;LIN Chun-Yu;Chiu Hsin-Chih |
分类号 |
H01L33/02;H01L21/66;H01L33/62 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a light-emitting device, comprising:
providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack is patterned and comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface. |
地址 |
Taiwan CN |