| 发明名称 |
SEMICONDUCTOR CHIP |
| 摘要 |
According to various embodiments, a semiconductor chip may include: a semiconductor body region including a first surface and a second surface opposite the first surface; a capacitive structure for detecting crack propagation into the semiconductor body region; wherein the capacitive structure may include a first electrode region at least partially surrounding the semiconductor body region and at least substantially extending from the first surface to the second surface; wherein the capacitive structure further may include a second electrode region disposed next to the first electrode region and an electrically insulating region extending between the first electrode region and the second electrode region. |
| 申请公布号 |
US2016155712(A1) |
申请公布日期 |
2016.06.02 |
| 申请号 |
US201414555735 |
申请日期 |
2014.11.28 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Gietler Herbert;Pressl Robert |
| 分类号 |
H01L23/58;H01L29/06;G01R31/26;H01L23/522 |
主分类号 |
H01L23/58 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor chip comprising:
a semiconductor body region comprising a first surface and a second surface opposite the first surface; a capacitive structure for detecting crack propagation into the semiconductor body region; wherein the capacitive structure comprises a first electrode region at least partially surrounding the semiconductor body region and at least substantially extending from the first surface to the second surface; and wherein the capacitive structure further comprises a second electrode region disposed next to the first electrode region and an electrically insulating region extending between the first electrode region and the second electrode region. |
| 地址 |
Neubiberg DE |
