Metallization Method for Semiconductor Structures

摘要

A method is provided for fabricating a semiconductor device that includes providing a structure with a sacrificial layer having at least one through-hole exposing a metal surface and, optionally, an oxide surface. In one example, the method may include applying a self-assembled monolayer selectively on the exposed metal surface and/or on the oxide surface. The method may also include growing a metal on the self-assembled monolayer and on the exposed metal surface if no self-assembled monolayer is present thereon, so as to fill the at least one through-hole, thereby forming at least one metal structure. The method may further include replacing the first sacrificial layer by a replacement dielectric layer having a dielectric constant of at most 3.9.

主权项

1. A method for fabricating a semiconductor device, comprising:
providing a device with a first sacrificial layer, wherein the first sacrificial layer includes at least one via exposing a metal surface; applying a self-assembled monolayer on the exposed metal surface; growing a metal on the self-assembled monolayer to fill the at least one via, thereby forming at least one metal pillar; and replacing the first sacrificial layer with a replacement dielectric layer having a dielectric constant of at most 3.9.