METHOD OF PROGRAMMING A RESISTIVE RANDOM ACCESS MEMORY

摘要

A method of programming a resistive random access memory switching from an insulating state to a conducting state, the memory including first and second electrodes separated by an electrically insulating material, and switching for the first time from the insulating state to the conducting state by applying a threshold voltage between the electrodes, with a first limited current flowing in the memory after the switching, the first limited current being limited by a current limitation device, the method including applying a voltage between the electrodes for the switching of the resistive random access memory from a highly resistive conducting state to a low resistive conducting state, with a second limited current flowing in the resistive random access memory after the switching, the second limited current being limited by the current limitation device, the second limited current being chosen strictly less than the first limited current.

主权项

1. A method of programming a resistive random access memory switching from an insulating state to a conducting state, said memory including a first electrode and a second electrode separated by a layer made of electrically insulating material, and switching for the first time from the insulating state to the conducting state by application of a threshold voltage VFORMING between the first and second electrodes, with a first limited current ICFORMING flowing in said resistive random access memory after the switching from the insulating state to the conducting state, with the first limited current ICFORMING being limited by a current limitation device, the method of programming comprising applying a voltage VSET between the first and second electrodes for switching the resistive random access memory from a highly resistive conducting state to a low resistive conducting state, with a second limited current ICSET flowing in the resistive random access memory after the switching from the highly resistive conducting state to the low resistive conducting state, the second limited current ICSET being limited by said current limitation device, the second limited current ICSET being chosen strictly less than the first limited current ICFORMING.