| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for a semiconductor device with the reduced number of selection gates per one columnar semiconductor layer.SOLUTION: A structure for a semiconductor device comprises: a first selection gate insulating film surrounding a first columnar semiconductor layer; a first selection gate surrounding the first selection gate insulating film; a first bit line connected with an upper part of the first columnar semiconductor layer; a layer having a first charge storage layer surrounding a second columnar semiconductor layer; a first control gate surrounding the layer; a layer having a second charge storage layer surrounding the second columnar semiconductor layer formed above the first control gate; a second control gate surrounding the layer; and a first lower inner wire connecting between lower parts of the first and second columnar semiconductor layers. Further, the structure comprises a third charge storage layer, a third control gate, a layer having a fourth charge storage layer, a fourth control gate, a second selection gate insulating film, a second selection gate, a first source line connected with an upper part of a fourth columnar semiconductor layer, and a second lower inner wire connecting between lower parts of the third and fourth columnar semiconductor layers. |
