| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface emission type semiconductor laser which enables high output of fundamental lateral mode light and polarization control. <P>SOLUTION: A surface emission type semiconductor laser 10 comprises: a substrate 100; a lower distributed bragg reflector (DBR) 102 formed on the substrate 100; an active region 104; an upper DBR 106; and a mesa M formed on the substrate. An emission protective film 112, which covers a light emission part and has an anisotropic shape, is formed at a top part of the mesa M. Further, an interlayer dielectric film 114, covering a side wall of the mesa M and at least a periphery thereof, is formed. The interlayer dielectric film 114 includes: a periphery covering part 114A covering both end parts at the long axis side of the emission protective film 112; and a mode control part 114B formed on the emission protective film 112 and controlling the fundamental lateral mode oscillation. <P>COPYRIGHT: (C)2013,JPO&INPIT |
