发明名称 レジストパターン形成方法
摘要 A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.
申请公布号 JP5928345(B2) 申请公布日期 2016.06.01
申请号 JP20120554648 申请日期 2011.12.21
申请人 JSR株式会社 发明人 榊原 宏和;古川 泰一;堀 雅史;伊藤 亘史;宮田 拡
分类号 G03F7/038;G03F7/004;G03F7/039 主分类号 G03F7/038
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