| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element module which can successfully reduce a switching loss occurring at the time of turn-off of a drive element due to high-speed operation response.SOLUTION: A semiconductor element module 1 comprises a voltage change sense element 3 for detecting a change in collector-emitter voltage of a drive element 2, in which a collector of the voltage change sense element 3 is connected to the collector of the drive element 2 and a gate is connected to an own emitter, and the emitter of the voltage change sense element 3 serves as a detection terminal S of the semiconductor element module 1. A gate drive circuit 9 comprises a turn-off control part 6 which decreases a gate resistance value at a step of the start of turn-off to set a switching speed at a faster speed and which increases the gate resistance value when detecting a change in terminal voltage of a resistance element R1 during a turn-off period to decrease the switching speed. |
