发明名称 Power semiconductor device and method for producing a power semiconductor device
摘要 A power semiconductor device comprising a power semiconductor module and a heat sink and a method for its manufacture. The heat sink has a first cooling housing component, with a cutout passing therethrough, and a second cooling housing component, with a cooling plate arranged in the cutout. The first and second cooling housing components are configured and arranged relative to one another so that a cavity is formed at the side of the cooling plate facing away from the power semiconductor components. The cooling plate is connected to the first cooling housing component by a first weld seam which extends circumferentially therearound. The first weld seam seals the cooling plate in relation to the first cooling housing component, and the second cooling housing component is connected to the first cooling housing component. The inventive power semiconductor device has good heat conduction from the power semiconductor components to a heat sink.
申请公布号 EP2844051(A3) 申请公布日期 2016.06.01
申请号 EP20140176903 申请日期 2014.07.14
申请人 SEMIKRON ELEKTRONIK GMBH & CO. KG 发明人 BOGEN, INGO;BECK, MARKUS;KULAS, HARTMUT;POPESCU, ALEXANDER;HELLDÖRFER, REINHARD
分类号 H05K7/20 主分类号 H05K7/20
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