| 摘要 |
A thin-film transistor according to the present disclosure includes: a substrate; a gate electrode above the substrate; a gate insulating layer on the gate electrode; a channel layer on the gate insulating layer which is located on the gate electrode; a source electrode above the channel layer; a drain electrode above the channel layer; and a barrier layer between the channel layer and the source electrode and between the channel layer and the drain electrode. Each of the source electrode and the drain electrode is made of a metal including copper, and the barrier layer contains nitrogen and molybdenum and has a density greater than 7.5 g/cm3 and less than 10.5 g/cm3. |
