发明名称 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 An electronic device is provided. The electronic device according to an embodiment of the present invention includes a semiconductor memory. The semiconductor memory includes: an inter layer dielectric film which is formed on a substrate, and has a hole; a conductive pattern having an upper plane located at the same level as an upper plane of the inter layer dielectric film actually by being buried in the hole; and a laminated structure which is connected to the conductive pattern on the conductive pattern, and includes a free layer having a changeable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed therebetween. The upper part of the conductive pattern may include an amorphous area. The objective of the present invention is to provide the electronic device which can secure the characteristics of a variable resistor, and has a low process level of difficulty.
申请公布号 KR20160061746(A) 申请公布日期 2016.06.01
申请号 KR20140164523 申请日期 2014.11.24
申请人 SK HYNIX INC. 发明人 PARK, KI SEON;LEE, BO MI;CHOI, WON JOON;KIM, GUK CHEON
分类号 H01L43/08;H01L21/8247;H01L27/115;H01L43/12 主分类号 H01L43/08
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